Micron动态随机存取存储器MT41K128M16JT-125 IT:K TR

发布时间:2018/11/2

Micron动态随机存取存储器MT41K128M16JT-125 IT:K TR
制造商编号:MT41K128M16JT-125 IT:K TR
制造商:Micron
说明:动态随机存取存储器 DDR3 2G 128MX16 FBGA
Description:MT41K128M16JT-125 IT:K TR
The 1.35V DDR3L SDRAM device is a low-voltage version
of the 1.5V DDR3 SDRAM device. Refer to the
DDR3 (1.5V) SDRAM data sheet specifications when
running in 1.5V compatible mode.

Features:MT41K128M16JT-125 IT:K TR
? VDD = VDDQ = 1.35V (1.283–1.45V)
? Backward-compatible to VDD = VDDQ = 1.5V ±0.075V
? Differential bidirectional data strobe
? 8n-bit prefetch architecture
? Differential clock inputs (CK, CK#)
? 8 internal banks
? Nominal and dynamic on-die termination (ODT)
for data, strobe, and mask signals
? Programmable CAS (READ) latency (CL)
? Programmable posted CAS additive latency (AL)
? Programmable CAS (WRITE) latency (CWL)
? Fixed burst length (BL) of 8 and burst chop (BC) of 4
(via the mode register set [MRS])
? Selectable BC4 or BL8 on-the-fly (OTF)
? Self refresh mode
? TC of 95°C
– 64ms, 8192-cycle refresh up to 85°C
– 32ms, 8192-cycle refresh at >85°C to 95°C
? Self refresh temperature (SRT)
? Automatic self refresh (ASR)
? Write leveling
? Multipurpose register
? Output driver calibration

Options Marking:MT41K128M16JT-125 IT:K TR
? Configuration
– 512 Meg x 4 512M4
– 256 Meg x 8 256M8
– 128 Meg x 16 128M16
? FBGA package (Pb-free) – x4, x8
– 78-ball (8mm x 10.5mm x 1.2mm)
Rev. K DA
? FBGA package (Pb-free) – x16
– 96-ball (8mm x 14mm x 1.2mm)
Rev. K
JT
? Timing – cycle time
– 1.07ns @ CL = 13 (DDR3-1866) -107
– 1.25ns @ CL = 11 (DDR3-1600) -125
– 1.5ns @ CL = 9 (DDR3-1333) -15E
– 1.875ns @ CL = 7 (DDR3-1066) -187E
? Operating temperature
– Commercial (0°C ≤ TC ≤ +95°C) None
– Industrial (–40°C ≤ TC ≤ +95°C) IT
? Revision :K

产品属性:MT41K128M16JT-125 IT:K TR
制造商: Micron Technology
产品种类: 动态随机存取存储器
类型: SDRAM - DDR3L
数据总线宽度: 16 bit
组织: 128 M x 16
封装 / 箱体: FBGA-96
存储容量: 2 Gbit
最大时钟频率: 800 MHz
电源电压-最大: 1.45 V
电源电压-最小: 1.283 V
电源电流—最大值: 195 mA
最小工作温度: - 40 C
最大工作温度: + 95 C